IXFT16N120P-TRL

Specifications

Standard Package Name

TO-268-AA

Pin Sayısı

3

Qg Gate Charge

120 nC

Typical Turnoff Delay Time Ns

66

Maximum Gate Source Voltage V

±30

Automotive

No

Parça Durumu

Active

Ppap

No

Vgs Gatesource Voltage

- 30 V, + 30 V

Typical Gate Charge10v Nc

120

Vgs Th Gatesource Threshold Voltage

3.5 V

Rds On Drainsource Resistance

960 mOhms

Process Technology

HiperFET

Channel Type

N

Category

Power MOSFET

Eccn Us

EAR99

Technology

Si

Number Of Channels

1 Channel

Supplier Package

D3PAK

Mounting

Surface Mount

Typical Rise Time Ns

28

Package Length

16.05(Max)

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

35

Vds Drainsource Breakdown Voltage

1.2 kV

Tab

Tab

Typical Turnon Delay Time Ns

35

Package Width

14(Max)

Maximum Operating Temperature C

150

Package Height

5.1(Max)

Id Continuous Drain Current

16 A

Pd Power Dissipation

660 W

Kılıf / Paket

TO-268-3

Maximum Power Dissipation Mw

660000

Number Of Elements Per Chip

1

Ambalaj

Tape and Reel

Typical Input Capacitance Vds Pf

6900@25V

Maximum Drain Source Voltage V

1200

Lead Shape

Gull-wing

Montaj Stili

Through Hole