IXFT16N120P

Specifications

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Mounting

Surface Mount

Typical Fall Time Ns

35

Typical Turnon Delay Time Ns

35

Hts

8541.29.00.95

Pin Sayısı

3

Svhc

Yes

Maximum Gate Source Voltage V

±30

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Transistor Polarity

N-Channel

Vgs Gatesource Voltage

- 30 V, + 30 V

Minimum Operating Temperature C

-55

Minimum Operating Temperature

- 55 C

Maximum Continuous Drain Current A

16

Package Width

14(Max)

Kılıf / Paket

TO-268-3

Pd Power Dissipation

660 W

Lead Shape

Gull-wing

Maximum Drain Source Voltage V

1200

Montaj Stili

SMD/SMT

Channel Type

N

Rds On Drainsource Resistance

950 mOhms

Supplier Package

D3PAK

Number Of Channels

1 Channel

Typical Rise Time Ns

28

Package Length

16.05(Max)

Vds Drainsource Breakdown Voltage

1.2 kV

Eu Rohs

Compliant with Exemption

Tab

Tab

Standard Package Name

TO-268-AA

Qg Gate Charge

120 nC

Typical Turnoff Delay Time Ns

66

Automotive

No

Ppap

No

Typical Gate Charge10v Nc

120

Vgs Th Gatesource Threshold Voltage

6.5 V

Channel Mode

Enhancement