IXFT15N100Q3-TRL

Specifications

Channel Mode

Enhancement

Maximum Continuous Drain Current A

15

Maximum Drain Source Resistance Mohm

1050@10V

Typical Gate Charge Vgs Nc

64@10V

Pcb Changed

2

Configuration

Single

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

3250@25V

Maximum Power Dissipation Mw

690000

Number Of Elements Per Chip

1

Ambalaj

Tape and Reel

Maximum Drain Source Voltage V

1000

Montaj Stili

SMD/SMT

Package Width

14(Max)

Package Height

5.1(Max)

Maximum Operating Temperature C

150

Id Continuous Drain Current

15 A

Kılıf / Paket

TO-268-3

Pd Power Dissipation

690 W

Mounting

Surface Mount

Package Length

16.05(Max)

Typical Rise Time Ns

10

Vds Drainsource Breakdown Voltage

1 kV

Typical Fall Time Ns

8

Eu Rohs

Compliant with Exemption

Typical Turnon Delay Time Ns

28

Tab

Tab

Channel Type

N

Process Technology

HiperFET

Rds On Drainsource Resistance

1.05 Ohms

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Supplier Package

TO-268

Number Of Channels

1 Channel

Ppap

No

Vgs Gatesource Voltage

- 30 V, + 30 V

Typical Gate Charge10v Nc

64

Vgs Th Gatesource Threshold Voltage

3.5 V

Typical Turnoff Delay Time Ns

30