IXFT150N30X3HV

Specifications

Tab

Tab

Eu Rohs

Compliant with Exemption

Vds Drainsource Breakdown Voltage

300 V

Typical Rise Time Ns

32

Package Length

16.05(Max)

Supplier Package

TO-268HV

Number Of Channels

1 Channel

Rds On Drainsource Resistance

8.3 mOhms

Channel Type

N

Vgs Th Gatesource Threshold Voltage

4.5 V

Typical Gate Charge10v Nc

177

Ppap

No

Automotive

No

Qg Gate Charge

177 nC

Typical Turnoff Delay Time Ns

187

Power Dissipation

890W

Configuration

Single

Pcb Changed

2

Maximum Drain Source Resistance Mohm

8.3@10V

Typical Gate Charge Vgs Nc

177@10V

Channel Mode

Enhancement

Maks. Çalışma Sıcaklığı

+ 150 C

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

890000

Typical Input Capacitance Vds Pf

13100@25V

Id Continuous Drain Current

150 A

Maximum Operating Temperature C

150

Package Height

5.1(Max)

Typical Turnon Delay Time Ns

40

Typical Fall Time Ns

14

Mounting

Surface Mount

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Vgs Gatesource Voltage

- 20 V, + 20 V

Transistor Polarity

N-Channel

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Continuous Drain Current Id

150A

Svhc

Yes