IXFT150N20T

Specifications

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

5

Pcb Changed

2

Configuration

Single

Maximum Drain Source Resistance Mohm

15@10V

Typical Gate Charge Vgs Nc

177@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

150

Package Height

5.1(Max)

Maximum Operating Temperature C

150

Package Width

14(Max)

Maximum Idss Ua

25

Maximum Drain Source Voltage V

200

Typical Input Capacitance Vds Pf

11700@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

890000

Supplier Package

TO-268AA

Category

Power MOSFET

Process Technology

HiperFET

Channel Type

N

Maximum Gate Source Leakage Current Na

200

Typical Turnon Delay Time Ns

43

Tab

Tab

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

12

Typical Rise Time Ns

12

Package Length

16.05(Max)

Mounting

Surface Mount

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Automotive

No

Maximum Gate Source Voltage V

±20

Svhc

Yes

Typical Turnoff Delay Time Ns

45

Pin Sayısı

3

Typical Gate Charge10v Nc

177

Ppap

No