IXFT150N17T2

Specifications

Maximum Drain Source Resistance Mohm

12@10V

Typical Gate Charge Vgs Nc

233@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

150

Configuration

Single

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

175

Typical Input Capacitance Vds Pf

14600@25V

Maximum Power Dissipation Mw

880000

Number Of Elements Per Chip

1

Maximum Operating Temperature C

175

Typical Rise Time Ns

16

Typical Turnon Delay Time Ns

32

Typical Fall Time Ns

20

Eu Rohs

Compliant with Exemption

Channel Type

N

Category

Power MOSFET

Eccn Us

EAR99

Typical Gate Charge10v Nc

233

Ppap

No

Typical Turnoff Delay Time Ns

50

Automotive

No

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Svhc

Yes

Maximum Gate Source Voltage V

±20