IXFT140N20X3HV

Specifications

Vgs Th Gatesource Threshold Voltage

2.5 V

Vgs Gatesource Voltage

- 20 V, + 20 V

Ppap

No

Typical Gate Charge10v Nc

127

Maximum Gate Source Voltage V

±20

Svhc

Yes

Parça Durumu

Active

Transistor Polarity

N-Channel

Svhc Exceeds Threshold

Yes

Automotive

No

Qg Gate Charge

127 nC

Typical Turnoff Delay Time Ns

130

Pin Sayısı

3

Vds Drainsource Breakdown Voltage

200 V

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

12

Typical Turnon Delay Time Ns

28

Tab

Tab

Mounting

Surface Mount

Package Length

16.05(Max)

Typical Rise Time Ns

20

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Number Of Channels

1 Channel

Supplier Package

TO-268HV

Channel Type

N

Rds On Drainsource Resistance

9.6 mOhms

Montaj Stili

Through Hole

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Input Capacitance Vds Pf

7660@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

480000

Maximum Drain Source Voltage V

200

Id Continuous Drain Current

140 A

Kılıf / Paket

TO-268HV-3

Pd Power Dissipation

480 W

Package Width

14(Max)

Package Height

5.1(Max)

Maximum Operating Temperature C

150