IXFT140N10PTRL

Specifications

Typical Gate Charge10v Nc

155

Vgs Gatesource Voltage

- 20 V, + 20 V

Ppap

No

Vgs Th Gatesource Threshold Voltage

3 V

Pin Sayısı

3

Typical Turnoff Delay Time Ns

85

Hts

8541.29.00.95

Qg Gate Charge

155 nC

Parça Durumu

Active

Automotive

No

Maximum Gate Source Voltage V

±20

Package Length

16.05(Max)

Typical Rise Time Ns

50

Mounting

Surface Mount

Tab

Tab

Typical Turnon Delay Time Ns

35

Typical Fall Time Ns

26

Eu Rohs

Compliant with Exemption

Vds Drainsource Breakdown Voltage

100 V

Rds On Drainsource Resistance

11 mOhms

Process Technology

HiperFET

Channel Type

N

Supplier Package

TO-268

Number Of Channels

1 Channel

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Maximum Drain Source Voltage V

100

Maximum Power Dissipation Mw

600000

Number Of Elements Per Chip

1

Ambalaj

Tape and Reel

Typical Input Capacitance Vds Pf

4700@25V

Montaj Stili

Through Hole

Maximum Operating Temperature C

175

Package Height

5.1(Max)

Package Width

14(Max)

Pd Power Dissipation

600 W

Kılıf / Paket

TO-268-3

Id Continuous Drain Current

140 A

Maximum Drain Source Resistance Mohm

11@10V