IXFT120N15P

Specifications

Typical Input Capacitance Vds Pf

4900@25V

Maximum Power Dissipation Mw

600000

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

150

Package Width

14(Max)

Package Height

5.1(Max)

Maximum Operating Temperature C

175

Channel Mode

Enhancement

Maximum Continuous Drain Current A

120

Maximum Drain Source Resistance Mohm

16@10V

Typical Gate Charge Vgs Nc

150@10V

Pcb Changed

2

Configuration

Single

Minimum Operating Temperature C

-55

Ppap

No

Typical Gate Charge10v Nc

150

Typical Turnoff Delay Time Ns

85

Hts

8541.29.00.95

Pin Sayısı

3

Svhc

Yes

Maximum Gate Source Voltage V

±20

Automotive

No

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Mounting

Surface Mount

Package Length

16.05(Max)

Typical Rise Time Ns

42

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

26

Typical Turnon Delay Time Ns

33

Tab

Tab

Channel Type

N

Process Technology

HiperFET

Category

Power MOSFET

Eccn Us

EAR99

Supplier Package

TO-268