IXFT100N30X3HV

Specifications

Parça Durumu

Active

Transistor Polarity

N-Channel

Svhc Exceeds Threshold

Yes

Maximum Gate Source Voltage V

±20

Svhc

Yes

Pin Sayısı

3

Qg Gate Charge

122 nC

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

114

Vgs Th Gatesource Threshold Voltage

4.5 V

Typical Gate Charge10v Nc

122

Vgs Gatesource Voltage

- 20 V, + 20 V

Number Of Channels

1 Channel

Supplier Package

TO-268HV

Technology

Si

Category

Power MOSFET

Eccn Us

EAR99

Rds On Drainsource Resistance

13.5 mOhms

Channel Type

N

Tab

Tab

Typical Turnon Delay Time Ns

29

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

14

Vds Drainsource Breakdown Voltage

300 V

Package Length

16.05(Max)

Typical Rise Time Ns

30

Mounting

Surface Mount

Pd Power Dissipation

480 W

Kılıf / Paket

TO-268HV-3

Id Continuous Drain Current

100 A

Maximum Operating Temperature C

150

Package Height

5.1(Max)

Package Width

14(Max)

Montaj Stili

SMD/SMT

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Drain Source Voltage V

300

Maximum Power Dissipation Mw

480000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

7660@25V

Minimum Operating Temperature C

-55