IXFR90N30

Specifications

Category

Power MOSFET

Technology

Si

Typical Turnon Delay Time Ns

42

Typical Fall Time Ns

40

Mounting

Through Hole

Transistor Polarity

N-Channel

Parça Durumu

NRND

Maximum Gate Source Voltage V

±20

Pin Sayısı

3

Hts

8541.10.00.80

Vgs Gatesource Voltage

- 20 V, + 20 V

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

4.5

Minimum Operating Temperature

- 55 C

Maximum Continuous Drain Current A

75

Pd Power Dissipation

417 W

Kılıf / Paket

TO-247-3

Package Width

5.21(Max)

Montaj Stili

Through Hole

Maximum Drain Source Voltage V

300

Supplier Package

ISOPLUS 247

Number Of Channels

1 Channel

Rds On Drainsource Resistance

36 mOhms

Process Technology

HiperFET

Channel Type

N

Maximum Gate Source Leakage Current Na

100

Tab

Tab

Eu Rohs

Compliant with Exemption

Vds Drainsource Breakdown Voltage

300 V

Typical Rise Time Ns

55

Package Length

16.13(Max)

Automotive

No

Material

Si

Qg Gate Charge

360 nC

Typical Turnoff Delay Time Ns

100

Vgs Th Gatesource Threshold Voltage

4.5 V

Typical Gate Charge10v Nc

360

Ppap

No

Configuration

Single

Pcb Changed

3