IXFR80N60P3

Specifications

Maximum Drain Source Voltage V

600

Typical Input Capacitance Vds Pf

13100@25V

Maximum Power Dissipation Mw

540000

Number Of Elements Per Chip

1

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

Through Hole

Package Height

21.34(Max)

Maximum Operating Temperature C

150

Package Width

5.21(Max)

Kılıf / Paket

TO-247-3

Pd Power Dissipation

540 W

Id Continuous Drain Current

48 A

Maximum Drain Source Resistance Mohm

85@10V

Typical Gate Charge Vgs Nc

190@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

48

Minimum Operating Temperature

- 55 C

Pcb Changed

3

Configuration

Single

Minimum Operating Temperature C

-55

Typical Gate Charge10v Nc

190

Ppap

No

Vgs Gatesource Voltage

- 30 V, + 30 V

Vgs Th Gatesource Threshold Voltage

5 V

Qg Gate Charge

190 nC

Typical Turnoff Delay Time Ns

87

Pin Sayısı

3

Material

Si

Automotive

No

Transistor Polarity

N-Channel

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Typical Rise Time Ns

25

Package Length

16.13(Max)

Mounting

Through Hole

Typical Turnon Delay Time Ns

48

Tab

Tab

Vds Drainsource Breakdown Voltage

600 V

Typical Fall Time Ns

8

Eu Rohs

Compliant with Exemption