IXFR80N50Q3

Specifications

Package Width

5.21(Max)

Package Height

21.34(Max)

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

10000@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

570000

Maximum Drain Source Voltage V

500

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Maximum Continuous Drain Current A

50

Typical Gate Charge Vgs Nc

200@10V

Maximum Drain Source Resistance Mohm

72@10V

Pcb Changed

3

Configuration

Single

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

43

Pin Sayısı

3

Material

Si

Maximum Gate Source Voltage V

±30

Parça Durumu

Active

Automotive

No

Ppap

No

Typical Gate Charge10v Nc

200

Process Technology

HiperFET

Channel Type

N

Eccn Us

EAR99

Category

Power MOSFET

Supplier Package

ISOPLUS 247

Mounting

Through Hole

Package Length

16.13(Max)

Typical Rise Time Ns

20

Typical Fall Time Ns

15

Eu Rohs

Compliant with Exemption

Typical Turnon Delay Time Ns

30

Tab

Tab