IXFR64N60P

Specifications

Maximum Drain Source Voltage V

600

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

320000

Typical Input Capacitance Vds Pf

12000@25V

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Package Width

5.21(Max)

Maximum Drain Source Resistance Mohm

105@10V

Typical Gate Charge Vgs Nc

200@10V

Maximum Continuous Drain Current A

36

Channel Mode

Enhancement

Configuration

Single

Pcb Changed

3

Minimum Operating Temperature C

-55

Typical Gate Charge10v Nc

200

Ppap

No

Material

Si

Pin Sayısı

3

Typical Turnoff Delay Time Ns

79

Hts

8541.10.00.80

Automotive

No

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Package Length

16.13(Max)

Typical Rise Time Ns

23

Mounting

Through Hole

Tab

Tab

Typical Turnon Delay Time Ns

28

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

24

Channel Type

N

Process Technology

HiperFET

Supplier Package

ISOPLUS 247

Category

Power MOSFET

Eccn Us

EAR99