IXFR55N50

Specifications

Maximum Power Dissipation Mw

400000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

9400@25V

Maximum Drain Source Voltage V

500

Lead Shape

Through Hole

Package Width

5.21(Max)

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Configuration

Single

Pcb Changed

3

Maximum Continuous Drain Current A

48

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

90@10V

Typical Gate Charge Vgs Nc

330@10V

Minimum Operating Temperature C

-40

Ppap

No

Typical Gate Charge10v Nc

330

Maximum Gate Source Voltage V

±20

Automotive

No

Parça Durumu

Obsolete

Standard Package Name

SOP

Material

Si

Pin Sayısı

3

Typical Turnoff Delay Time Ns

120

Hts

8541.29.00.95

Typical Fall Time Ns

45

Eu Rohs

Compliant

Tab

Tab

Typical Turnon Delay Time Ns

45

Mounting

Through Hole

Typical Rise Time Ns

60

Package Length

16.13(Max)

Eccn Us

EAR99

Category

Power MOSFET

Supplier Package

ISOPLUS 247

Process Technology

HiperFET

Channel Type

N