IXFR44N60

Specifications

Mounting

Through Hole

Package Length

16.13(Max)

Typical Rise Time Ns

55

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

45

Vds Drainsource Breakdown Voltage

600 V

Tab

Tab

Typical Turnon Delay Time Ns

42

Rds On Drainsource Resistance

130 mOhms

Channel Type

N

Process Technology

HiperFET

Technology

Si

Category

Power MOSFET

Number Of Channels

1 Channel

Supplier Package

ISOPLUS 247

Vgs Gatesource Voltage

- 20 V, + 20 V

Ppap

No

Typical Gate Charge10v Nc

330

Vgs Th Gatesource Threshold Voltage

2.5 V

Pin Sayısı

3

Material

Si

Qg Gate Charge

330 nC

Typical Turnoff Delay Time Ns

110

Maximum Gate Source Voltage V

±20

Automotive

No

Transistor Polarity

N-Channel

Parça Durumu

Active

Minimum Operating Temperature

- 55 C

Maximum Continuous Drain Current A

38

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

330@10V

Maximum Drain Source Resistance Mohm

130@10V

Configuration

Single

Pcb Changed

3

Minimum Operating Temperature C

-55

Maximum Power Dissipation Mw

400000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

8900@25V

Maximum Drain Source Voltage V

600

Montaj Stili

Through Hole