IXFR44N50Q

Specifications

Pd Power Dissipation

310 W

Kılıf / Paket

TO-247-3

Id Continuous Drain Current

34 A

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Package Width

5.21(Max)

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

Through Hole

Maximum Drain Source Voltage V

500

Maximum Power Dissipation Mw

310000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

7000@25V

Minimum Operating Temperature C

-55

Configuration

Single

Pcb Changed

3

Maximum Drain Source Resistance Mohm

120@10V

Typical Gate Charge Vgs Nc

190@10V

Maximum Continuous Drain Current A

34

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Automotive

No

Transistor Polarity

N-Channel

Parça Durumu

NRND

Maximum Gate Source Voltage V

±20

Pin Sayısı

3

Material

Si

Typical Turnoff Delay Time Ns

75

Typical Gate Charge10v Nc

190

Vgs Gatesource Voltage

- 20 V, + 20 V

Ppap

No

Supplier Package

ISOPLUS 247

Number Of Channels

1 Channel

Category

Power MOSFET

Technology

Si

Rds On Drainsource Resistance

154 mOhms

Channel Type

N

Process Technology

HiperFET

Tab

Tab

Typical Turnon Delay Time Ns

33

Eu Rohs

Compliant with Exemption