IXFR36N60P

Specifications

Typical Turnoff Delay Time Ns

80

Hts

8541.29.00.95

Material

Si

Pin Sayısı

3

Maximum Gate Source Voltage V

±30

Automotive

No

Parça Durumu

Active

Ppap

No

Typical Gate Charge10v Nc

102

Maximum Gate Source Leakage Current Na

100

Channel Type

N

Process Technology

HiperFET

Category

Power MOSFET

Eccn Us

EAR99

Supplier Package

ISOPLUS 247

Mounting

Through Hole

Package Length

16.13(Max)

Typical Rise Time Ns

25

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

22

Typical Turnon Delay Time Ns

30

Tab

Tab

Package Width

5.21(Max)

Package Height

21.34(Max)

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

5800@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

208000

Maximum Idss Ua

25

Maximum Drain Source Voltage V

600

Maximum Gate Threshold Voltage V

5

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Maximum Continuous Drain Current A

20

Maximum Drain Source Resistance Mohm

200@10V

Typical Gate Charge Vgs Nc

102@10V

Pcb Changed

3

Configuration

Single