IXFR32N80Q3

Specifications

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Package Width

5.21(Max)

Maximum Drain Source Voltage V

800

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

500000

Typical Input Capacitance Vds Pf

6940@25V

Minimum Operating Temperature C

-55

Maximum Drain Source Resistance Mohm

300@10V

Typical Gate Charge Vgs Nc

140@10V

Maximum Continuous Drain Current A

24

Channel Mode

Enhancement

Configuration

Single

Pcb Changed

3

Material

Si

Pin Sayısı

3

Typical Turnoff Delay Time Ns

45

Automotive

No

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Typical Gate Charge10v Nc

140

Ppap

No

Channel Type

N

Process Technology

HiperFET

Supplier Package

ISOPLUS 247

Category

Power MOSFET

Typical Rise Time Ns

13

Package Length

16.13(Max)

Mounting

Through Hole

Tab

Tab

Typical Turnon Delay Time Ns

38

Typical Fall Time Ns

10

Eu Rohs

Compliant with Exemption