IXFR32N80P

Specifications

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

300000

Typical Input Capacitance Vds Pf

8800@25V

Maximum Drain Source Voltage V

800

Package Width

5.21(Max)

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Maximum Continuous Drain Current A

20

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

150@10V

Maximum Drain Source Resistance Mohm

290@10V

Configuration

Single

Pcb Changed

3

Minimum Operating Temperature C

-55

Ppap

No

Typical Gate Charge10v Nc

150

Material

Si

Pin Sayısı

3

Typical Turnoff Delay Time Ns

85

Hts

8541.29.00.95

Maximum Gate Source Voltage V

±30

Automotive

No

Parça Durumu

Active

Mounting

Through Hole

Package Length

16.13(Max)

Typical Rise Time Ns

24

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

24

Tab

Tab

Typical Turnon Delay Time Ns

30

Channel Type

N

Process Technology

HiperFET

Category

Power MOSFET

Eccn Us

EAR99

Supplier Package

ISOPLUS 247