IXFR32N100Q3

Specifications

Maximum Power Dissipation Mw

570000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

10900@25V

Maximum Drain Source Voltage V

1000

Maximum Idss Ua

50

Package Width

5.21(Max)

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Configuration

Single

Pcb Changed

3

Maximum Continuous Drain Current A

23

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

195@10V

Maximum Drain Source Resistance Mohm

350@10V

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

6.5

Ppap

No

Typical Gate Charge10v Nc

195

Maximum Gate Source Voltage V

±30

Parça Durumu

Active

Automotive

No

Pin Sayısı

3

Typical Turnoff Delay Time Ns

54

Typical Fall Time Ns

12

Eu Rohs

Compliant with Exemption

Tab

Tab

Typical Turnon Delay Time Ns

45

Mounting

Through Hole

Typical Rise Time Ns

15

Package Length

16.13(Max)

Category

Power MOSFET

Supplier Package

ISOPLUS 247

Maximum Gate Source Leakage Current Na

200

Channel Type

N

Process Technology

HiperFET