IXFR32N100P

Specifications

Supplier Package

ISOPLUS 247

Number Of Channels

1 Channel

Category

Power MOSFET

Technology

Si

Rds On Drainsource Resistance

340 mOhms

Channel Type

N

Process Technology

HiperFET

Tab

Tab

Typical Turnon Delay Time Ns

50

Typical Fall Time Ns

43

Eu Rohs

Compliant with Exemption

Vds Drainsource Breakdown Voltage

1 kV

Typical Rise Time Ns

55

Package Length

16.13(Max)

Mounting

Through Hole

Automotive

No

Transistor Polarity

N-Channel

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Pin Sayısı

3

Material

Si

Typical Turnoff Delay Time Ns

76

Typical Gate Charge10v Nc

225

Vgs Gatesource Voltage

- 30 V, + 30 V

Ppap

No

Minimum Operating Temperature C

-55

Configuration

Single

Pcb Changed

3

Maximum Drain Source Resistance Mohm

340@10V

Typical Gate Charge Vgs Nc

225@10V

Maximum Continuous Drain Current A

18

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Pd Power Dissipation

320 W

Kılıf / Paket

TO-247-3

Id Continuous Drain Current

18 A

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Package Width

5.21(Max)

Maks. Çalışma Sıcaklığı

+ 150 C