IXFR30N60P

Specifications

Technology

Si

Category

Power MOSFET

Number Of Channels

1 Channel

Supplier Package

ISOPLUS 247

Rds On Drainsource Resistance

250 mOhms

Channel Type

N

Process Technology

HiperFET

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

25

Vds Drainsource Breakdown Voltage

600 V

Tab

Tab

Typical Turnon Delay Time Ns

22

Mounting

Through Hole

Package Length

16.13(Max)

Typical Rise Time Ns

20

Maximum Gate Source Voltage V

±30

Parça Durumu

Active

Transistor Polarity

N-Channel

Automotive

No

Material

Si

Pin Sayısı

3

Typical Turnoff Delay Time Ns

75

Vgs Gatesource Voltage

- 30 V, + 30 V

Ppap

No

Typical Gate Charge10v Nc

85

Minimum Operating Temperature C

-55

Configuration

Single

Pcb Changed

3

Minimum Operating Temperature

- 55 C

Maximum Continuous Drain Current A

15

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

85@10V

Maximum Drain Source Resistance Mohm

250@10V

Id Continuous Drain Current

15 A

Pd Power Dissipation

166 W

Kılıf / Paket

TO-247-3

Seri

IXFR30N60

Package Width

5.21(Max)

Maximum Operating Temperature C

150

Package Height

21.34(Max)