IXFR26N100P

Specifications

Minimum Operating Temperature C

-55

Maximum Continuous Drain Current A

15

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

197@10V

Maximum Drain Source Resistance Mohm

430@10V

Configuration

Single

Pcb Changed

3

Package Width

5.21(Max)

Seri

IXFR26N100

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Id Continuous Drain Current

15 A

Pd Power Dissipation

290 W

Kılıf / Paket

TO-247-3

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

290000

Typical Input Capacitance Vds Pf

11900@25V

Maximum Drain Source Voltage V

1000

Montaj Stili

Through Hole

Maks. Çalışma Sıcaklığı

+ 150 C

Rds On Drainsource Resistance

430 mOhms

Process Technology

HiperFET

Channel Type

N

Technology

Si

Category

Power MOSFET

Number Of Channels

1 Channel

Supplier Package

ISOPLUS 247

Mounting

Through Hole

Package Length

16.13(Max)

Typical Rise Time Ns

45

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

50

Vds Drainsource Breakdown Voltage

1 kV

Tab

Tab

Typical Turnon Delay Time Ns

45

Pin Sayısı

3

Material

Si

Qg Gate Charge

197 nC

Typical Turnoff Delay Time Ns

72