IXFR24N90P

Specifications

Ppap

No

Vgs Gatesource Voltage

- 30 V, + 30 V

Typical Gate Charge10v Nc

130

Maximum Gate Source Voltage V

±30

Automotive

No

Transistor Polarity

N-Channel

Parça Durumu

Active

Typical Turnoff Delay Time Ns

68

Qg Gate Charge

58 nC

Material

Si

Pin Sayısı

3

Vds Drainsource Breakdown Voltage

900 V

Typical Fall Time Ns

38

Eu Rohs

Compliant with Exemption

Typical Turnon Delay Time Ns

46

Tab

Tab

Mounting

Through Hole

Typical Rise Time Ns

40

Package Length

16.13(Max)

Category

Power MOSFET

Technology

Si

Supplier Package

ISOPLUS 247

Channel Type

N

Process Technology

HiperFET

Rds On Drainsource Resistance

460 mOhms

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

Through Hole

Typical Input Capacitance Vds Pf

7500@25V

Maximum Power Dissipation Mw

230000

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

900

Id Continuous Drain Current

13 A

Kılıf / Paket

TO-247-3

Pd Power Dissipation

230 W

Package Width

5.21(Max)

Package Height

21.34(Max)

Maximum Operating Temperature C

150

Pcb Changed

3

Configuration

Single

Channel Mode

Enhancement