Volume pricing
- 1+ pcs$18.43
- 10+ pcs$17.39
- 100+ pcs$16.40
- 500+ pcs$15.47
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vds Drainsource Breakdown Voltage
- 200 V
- Eu Rohs
- Compliant with Exemption
- Typical Fall Time Ns
- 29
- Typical Turnon Delay Time Ns
- 41
- Tab
- Tab
- Mounting
- Through Hole
- Typical Rise Time Ns
- 35
- Package Length
- 16.13(Max)
- Category
- Power MOSFET
- Eccn Us
- EAR99
- Technology
- Si
- Supplier Package
- ISOPLUS 247
- Number Of Channels
- 1 Channel
- Process Technology
- HiperFET
- Channel Type
- N
- Rds On Drainsource Resistance
- 8 mOhms
- Vgs Th Gatesource Threshold Voltage
- 3 V
- Vgs Gatesource Voltage
- - 20 V, + 20 V
- Ppap
- No
- Typical Gate Charge10v Nc
- 378
- Maximum Gate Source Voltage V
- ±20
- Automotive
- No
- Transistor Polarity
- N-Channel
- Parça Durumu
- Active
- Typical Turnoff Delay Time Ns
- 104
- Qg Gate Charge
- 358 nC
- Material
- Si
- Pin Sayısı
- 3
- Pcb Changed
- 3
- Configuration
- Single
- Channel Mode
- Enhancement
- Maximum Continuous Drain Current A
- 156
- Minimum Operating Temperature
- - 55 C
- Maximum Drain Source Resistance Mohm
- 8@10V
- Typical Gate Charge Vgs Nc
- 378@10V
- Minimum Operating Temperature C
- -55
- Maks. Çalışma Sıcaklığı
- + 175 C
- Montaj Stili
- Through Hole
- Typical Input Capacitance Vds Pf
- 28000@25V
- Maximum Power Dissipation Mw
- 600000
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