IXFR20N80P

Specifications

Maximum Drain Source Voltage V

800

Maximum Power Dissipation Mw

166000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

4680@25V

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

Through Hole

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Package Width

5.21(Max)

Seri

IXFR20N80

Pd Power Dissipation

166 W

Kılıf / Paket

TO-247-3

Id Continuous Drain Current

10 A

Maximum Drain Source Resistance Mohm

500@10V

Typical Gate Charge Vgs Nc

85@10V

Maximum Continuous Drain Current A

11

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Configuration

Single

Pcb Changed

3

Minimum Operating Temperature C

-55

Typical Gate Charge10v Nc

85

Ppap

No

Vgs Gatesource Voltage

- 30 V, + 30 V

Material

Si

Pin Sayısı

3

Typical Turnoff Delay Time Ns

70

Parça Durumu

Active

Automotive

No

Transistor Polarity

N-Channel

Maximum Gate Source Voltage V

±30

Package Length

16.13(Max)

Typical Rise Time Ns

24

Mounting

Through Hole

Tab

Tab

Typical Turnon Delay Time Ns

22

Typical Fall Time Ns

25

Eu Rohs

Compliant with Exemption

Vds Drainsource Breakdown Voltage

800 V

Rds On Drainsource Resistance

570 mOhms