IXFR18N90P

Specifications

Minimum Operating Temperature C

-55

Maximum Drain Source Resistance Mohm

660@10V

Typical Gate Charge Vgs Nc

97@10V

Maximum Continuous Drain Current A

10.5

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Configuration

Single

Pcb Changed

3

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Package Width

5.21(Max)

Pd Power Dissipation

200 W

Kılıf / Paket

TO-247-3

Id Continuous Drain Current

10.5 A

Maximum Drain Source Voltage V

900

Maximum Power Dissipation Mw

200000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

5230@25V

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

Through Hole

Rds On Drainsource Resistance

660 mOhms

Channel Type

N

Number Of Channels

1 Channel

Supplier Package

ISOPLUS 247

Category

Power MOSFET

Technology

Si

Typical Rise Time Ns

33

Package Length

16.13(Max)

Mounting

Through Hole

Tab

Tab

Typical Turnon Delay Time Ns

40

Typical Fall Time Ns

44

Eu Rohs

Compliant with Exemption

Vds Drainsource Breakdown Voltage

900 V

Material

Si

Pin Sayısı

3

Typical Turnoff Delay Time Ns

60

Parça Durumu

Active

Automotive

No

Transistor Polarity

N-Channel