IXFR16N120P

Specifications

Minimum Operating Temperature C

-55

Pcb Changed

3

Configuration

Single

Maximum Drain Source Resistance Mohm

1040@10V

Typical Gate Charge Vgs Nc

120@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

9

Package Height

21.34(Max)

Maximum Operating Temperature C

150

Package Width

5.21(Max)

Maximum Drain Source Voltage V

1200

Typical Input Capacitance Vds Pf

6900@25V

Maximum Power Dissipation Mw

230000

Number Of Elements Per Chip

1

Supplier Package

ISOPLUS 247

Category

Power MOSFET

Channel Type

N

Process Technology

HiperFET

Typical Turnon Delay Time Ns

35

Tab

Tab

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

35

Package Length

16.13(Max)

Typical Rise Time Ns

28

Mounting

Through Hole

Automotive

No

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Typical Turnoff Delay Time Ns

66

Hts

8541.29.00.95

Material

Si

Pin Sayısı

3

Typical Gate Charge10v Nc

120

Ppap

No