IXFR102N30P

Specifications

Maximum Drain Source Voltage V

300

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

250000

Typical Input Capacitance Vds Pf

7500@25V

Montaj Stili

Through Hole

Maks. Çalışma Sıcaklığı

+ 150 C

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Package Width

5.21(Max)

Pd Power Dissipation

250 W

Kılıf / Paket

TO-247-3

Id Continuous Drain Current

60 A

Typical Gate Charge Vgs Nc

224@10V

Maximum Drain Source Resistance Mohm

36@10V

Maximum Continuous Drain Current A

60

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Configuration

Single

Pcb Changed

3

Minimum Operating Temperature C

-55

Typical Gate Charge10v Nc

224

Vgs Gatesource Voltage

- 20 V, + 20 V

Ppap

No

Vgs Th Gatesource Threshold Voltage

5 V

Pin Sayısı

3

Material

Si

Qg Gate Charge

224 nC

Typical Turnoff Delay Time Ns

130

Parça Durumu

Active

Transistor Polarity

N-Channel

Automotive

No

Maximum Gate Source Voltage V

±20

Package Length

16.13(Max)

Typical Rise Time Ns

28

Mounting

Through Hole

Tab

Tab

Typical Turnon Delay Time Ns

30

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

30

Vds Drainsource Breakdown Voltage

300 V