IXFQ94N30P3

Specifications

Configuration

Single

Pcb Changed

3

Maximum Drain Source Resistance Mohm

36@10V

Typical Gate Charge Vgs Nc

102@10V

Maximum Continuous Drain Current A

94

Channel Mode

Enhancement

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

5

Maximum Drain Source Voltage V

300

Maximum Idss Ua

25

Maximum Power Dissipation Mw

1040000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

5510@25V

Maximum Operating Temperature C

150

Package Width

4.9(Max)

Tab

Tab

Typical Turnon Delay Time Ns

23

Typical Fall Time Ns

11

Eu Rohs

Compliant with Exemption

Typical Rise Time Ns

19

Package Length

15.8(Max)

Mounting

Through Hole

Supplier Package

TO-3P

Category

Power MOSFET

Eccn Us

EAR99

Process Technology

HiperFET

Channel Type

N

Maximum Gate Source Leakage Current Na

100

Typical Gate Charge10v Nc

102

Ppap

No

Automotive

No

Parça Durumu

Active

Maximum Gate Source Voltage V

±20

Pin Sayısı

3

Typical Turnoff Delay Time Ns

49