IXFQ80N25X3

Specifications

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

4.5

Configuration

Single

Maximum Continuous Drain Current A

80

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

83@10V

Maximum Drain Source Resistance Mohm

16@10V

Maximum Operating Temperature C

150

Maximum Power Dissipation Mw

390000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

5430@25V

Maximum Drain Source Voltage V

250

Maximum Idss Ua

5

Eccn Us

EAR99

Category

Power MOSFET

Maximum Gate Source Leakage Current Na

100

Channel Type

N

Typical Fall Time Ns

8

Eu Rohs

Compliant

Typical Turnon Delay Time Ns

30

Typical Rise Time Ns

17

Maximum Gate Source Voltage V

±20

Automotive

No

Parça Durumu

Active

Typical Turnoff Delay Time Ns

65

Ppap

No

Typical Gate Charge10v Nc

83