IXFQ60N50P3

Specifications

Minimum Operating Temperature C

-55

Configuration

Single

Pcb Changed

3

Typical Gate Charge Vgs Nc

96@10V

Maximum Drain Source Resistance Mohm

110@10V

Maximum Continuous Drain Current A

60

Channel Mode

Enhancement

Maximum Operating Temperature C

150

Package Width

4.9(Max)

Maximum Drain Source Voltage V

500

Maximum Power Dissipation Mw

1040000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

6250@25V

Supplier Package

TO-3P

Category

Power MOSFET

Eccn Us

EAR99

Process Technology

Polar3 HiperFET

Channel Type

N

Tab

Tab

Typical Turnon Delay Time Ns

18

Typical Fall Time Ns

8

Eu Rohs

Compliant with Exemption

Typical Rise Time Ns

16

Package Length

15.8(Max)

Mounting

Through Hole

Parça Durumu

Active

Automotive

No

Continuous Drain Current Id

60A

Maximum Gate Source Voltage V

±30

Pin Sayısı

3

Typical Turnoff Delay Time Ns

37

Power Dissipation

1.04kW

Typical Gate Charge10v Nc

96

Ppap

No