IXFQ50N60X

Specifications

Montaj Stili

Through Hole

Maks. Çalışma Sıcaklığı

+ 150 C

Vgs Th Gatesource Threshold Voltage

2.5 V

Ppap

No

Vgs Gatesource Voltage

- 30 V, + 30 V

Id Continuous Drain Current

50 A

Transistor Polarity

N-Channel

Pd Power Dissipation

660 W

Automotive

No

Parça Durumu

NRND

Kılıf / Paket

TO-3P-3

Qg Gate Charge

116 nC

Eu Rohs

Compliant

Vds Drainsource Breakdown Voltage

600 V

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Technology

Si

Number Of Channels

1 Channel

Rds On Drainsource Resistance

73 mOhms