IXFQ50N50P3

Specifications

Maximum Drain Source Voltage V

500

Maximum Power Dissipation Mw

960000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

4335@25V

Maximum Operating Temperature C

150

Package Width

4.9(Max)

Typical Gate Charge Vgs Nc

85@10V

Maximum Drain Source Resistance Mohm

125@10V

Maximum Continuous Drain Current A

50

Channel Mode

Enhancement

Configuration

Single

Pcb Changed

3

Minimum Operating Temperature C

-55

Typical Gate Charge10v Nc

85

Ppap

No

Pin Sayısı

3

Typical Turnoff Delay Time Ns

53

Automotive

No

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Typical Rise Time Ns

8

Package Length

15.8(Max)

Mounting

Through Hole

Tab

Tab

Typical Turnon Delay Time Ns

25

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

10

Channel Type

N

Supplier Package

TO-3P

Category

Power MOSFET

Eccn Us

EAR99