IXFQ26N50P3

Specifications

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

5

Configuration

Single

Pcb Changed

3

Maximum Continuous Drain Current A

26

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

42@10V

Maximum Drain Source Resistance Mohm

250@10V

Package Width

4.9(Max)

Maximum Operating Temperature C

150

Maximum Power Dissipation Mw

500000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

2220@25V

Maximum Idss Ua

25

Maximum Drain Source Voltage V

500

Eccn Us

EAR99

Category

Power MOSFET

Supplier Package

TO-3P

Maximum Gate Source Leakage Current Na

100

Channel Type

N

Process Technology

HiperFET

Typical Fall Time Ns

5

Eu Rohs

Compliant with Exemption

Tab

Tab

Typical Turnon Delay Time Ns

21

Mounting

Through Hole

Typical Rise Time Ns

7

Package Length

15.8(Max)

Maximum Gate Source Voltage V

±30

Parça Durumu

Active

Automotive

No

Pin Sayısı

3

Typical Turnoff Delay Time Ns

38

Ppap

No

Typical Gate Charge10v Nc

42