IXFQ24N60X

Specifications

Typical Gate Charge10v Nc

47

Maximum Drain Source Voltage V

600

Maximum Power Dissipation Mw

400000

Number Of Elements Per Chip

1

Ppap

No

Typical Input Capacitance Vds Pf

1910@25V

Automotive

No

Parça Durumu

NRND

Maximum Gate Source Voltage V

±30

Maximum Operating Temperature C

150

Typical Turnoff Delay Time Ns

45

Configuration

Single

Typical Turnon Delay Time Ns

18

Eu Rohs

Compliant

Typical Fall Time Ns

15

Typical Gate Charge Vgs Nc

47@10V

Maximum Drain Source Resistance Mohm

175@10V

Typical Rise Time Ns

29

Maximum Continuous Drain Current A

24

Channel Mode

Enhancement

Minimum Operating Temperature C

-55

Category

Power MOSFET

Eccn Us

EAR99

Channel Type

N