IXFQ22N60P3

Specifications

Pcb Changed

3

Configuration

Single

Maximum Drain Source Resistance Mohm

360@10V

Typical Gate Charge Vgs Nc

38@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

22

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

600

Typical Input Capacitance Vds Pf

2600@25V

Maximum Power Dissipation Mw

500000

Number Of Elements Per Chip

1

Maximum Operating Temperature C

150

Package Width

4.9(Max)

Typical Turnon Delay Time Ns

28

Tab

Tab

Typical Fall Time Ns

19

Eu Rohs

Compliant with Exemption

Package Length

15.8(Max)

Typical Rise Time Ns

17

Mounting

Through Hole

Supplier Package

TO-3P

Category

Power MOSFET

Eccn Us

EAR99

Channel Type

N

Process Technology

Polar3 HiperFET

Typical Gate Charge10v Nc

38

Ppap

No

Automotive

No

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Typical Turnoff Delay Time Ns

54

Pin Sayısı

3