IXFQ20N50P3

Specifications

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

9

Tab

Tab

Typical Turnon Delay Time Ns

10

Mounting

Through Hole

Typical Rise Time Ns

5

Package Length

15.8(Max)

Eccn Us

EAR99

Category

Power MOSFET

Supplier Package

TO-3P

Maximum Gate Source Leakage Current Na

100

Process Technology

HiperFET

Channel Type

N

Ppap

No

Typical Gate Charge10v Nc

36

Maximum Gate Source Voltage V

±30

Parça Durumu

Active

Automotive

No

Pin Sayısı

3

Typical Turnoff Delay Time Ns

43

Configuration

Single

Pcb Changed

3

Maximum Continuous Drain Current A

20

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

300@10V

Typical Gate Charge Vgs Nc

36@10V

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

5

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

380000

Typical Input Capacitance Vds Pf

1800@25V

Maximum Drain Source Voltage V

500

Maximum Idss Ua

25

Package Width

4.9(Max)

Maximum Operating Temperature C

150