IXFQ140N20X3

Specifications

Maximum Power Dissipation Mw

480000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

7660@25V

Maximum Drain Source Voltage V

200

Montaj Stili

Through Hole

Maks. Çalışma Sıcaklığı

+ 150 C

Package Width

4.9(Max)

Maximum Operating Temperature C

150

Id Continuous Drain Current

140 A

Pd Power Dissipation

480 W

Kılıf / Paket

TO-3P-3

Minimum Operating Temperature

- 55 C

Maximum Continuous Drain Current A

140

Channel Mode

Enhancement

Typical Gate Charge Vgs Nc

127@10V

Maximum Drain Source Resistance Mohm

9.6@10V

Configuration

Single

Pcb Changed

3

Minimum Operating Temperature C

-55

Vgs Gatesource Voltage

- 20 V, + 20 V

Ppap

No

Typical Gate Charge10v Nc

127

Vgs Th Gatesource Threshold Voltage

2.5 V

Pin Sayısı

3

Qg Gate Charge

127 nC

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

130

Maximum Gate Source Voltage V

±20

Parça Durumu

Active

Transistor Polarity

N-Channel

Automotive

No

Mounting

Through Hole

Typical Rise Time Ns

20

Package Length

15.8(Max)

Typical Fall Time Ns

12

Eu Rohs

Compliant with Exemption

Vds Drainsource Breakdown Voltage

200 V

Tab

Tab

Typical Turnon Delay Time Ns

28

Rds On Drainsource Resistance

9.6 mOhms