IXFP90N20X3M

Specifications

Kılıf / Paket

TO-220-3

Pd Power Dissipation

36 W

Id Continuous Drain Current

90 A

Package Height

16.07(Max)

Maximum Operating Temperature C

150

Package Width

4.9(Max)

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

Through Hole

Maximum Drain Source Voltage V

200

Typical Input Capacitance Vds Pf

5420@25V

Maximum Power Dissipation Mw

36000

Number Of Elements Per Chip

1

Minimum Operating Temperature C

-55

Pcb Changed

3

Configuration

Single

Maximum Drain Source Resistance Mohm

12.8@10V

Typical Gate Charge Vgs Nc

78@10V

Channel Mode

Enhancement

Maximum Continuous Drain Current A

90

Minimum Operating Temperature

- 55 C

Automotive

No

Transistor Polarity

N-Channel

Parça Durumu

Active

Maximum Gate Source Voltage V

±20

Qg Gate Charge

78 nC

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

62

Pin Sayısı

3

Vgs Th Gatesource Threshold Voltage

2.5 V

Typical Gate Charge10v Nc

78

Vgs Gatesource Voltage

- 20 V, + 20 V

Ppap

No

Supplier Package

OVERMOLDED TO-220

Number Of Channels

1 Channel

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Channel Type

N

Rds On Drainsource Resistance

12.8 mOhms

Typical Turnon Delay Time Ns

22