IXFP90N20X3

Specifications

Supplier Package

TO-220AB

Number Of Channels

1 Channel

Channel Type

N

Rds On Drainsource Resistance

12.8 mOhms

Vds Drainsource Breakdown Voltage

200 V

Eu Rohs

Compliant

Tab

Tab

Typical Rise Time Ns

26

Package Length

10.66(Max)

Automotive

No

Power Dissipation

390W

Qg Gate Charge

78 nC

Typical Turnoff Delay Time Ns

62

Vgs Th Gatesource Threshold Voltage

2.5 V

Ppap

No

Typical Gate Charge10v Nc

78

Pcb Changed

3

Configuration

Single

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

12.8@10V

Typical Gate Charge Vgs Nc

78@10V

Id Continuous Drain Current

90 A

Package Height

9.15(Max)

Maximum Operating Temperature C

150

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Input Capacitance Vds Pf

5420@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

390000

Eccn Us

EAR99

Category

Power MOSFET

Technology

Si

Typical Fall Time Ns

13

Typical Turnon Delay Time Ns

22

Mounting

Through Hole

Maximum Gate Source Voltage V

±20

Continuous Drain Current Id

90A

Transistor Polarity

N-Channel

Parça Durumu

Active

Hts

8541.29.00.95

Pin Sayısı

3