IXFP8N85XM

Specifications

Tab

Tab

Typical Turnon Delay Time Ns

15

Typical Fall Time Ns

23

Eu Rohs

Compliant

Typical Rise Time Ns

25

Package Length

10.36(Max)

Mounting

Through Hole

Supplier Package

OVERMOLDED TO-220

Category

Power MOSFET

Eccn Us

EAR99

Channel Type

N

Maximum Diode Forward Voltage V

1.4

Maximum Positive Gate Source Voltage V

30

Typical Gate Charge10v Nc

17

Ppap

No

Automotive

No

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Pin Sayısı

3

Typical Turnoff Delay Time Ns

32

Configuration

Single

Pcb Changed

3

Maximum Drain Source Resistance Mohm

850@10V

Typical Gate Charge Vgs Nc

17@10V

Maximum Continuous Drain Current A

8

Channel Mode

Enhancement

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

5.5

Maximum Drain Source Voltage V

850

Maximum Power Dissipation Mw

33000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

654@25V

Operating Junction Temperature C

-55 to 150

Maximum Operating Temperature C

150

Package Height

16.07(Max)

Package Width

4.9(Max)