IXFP80N25X3

Specifications

Maximum Gate Source Voltage V

±20

Continuous Drain Current Id

80A

Parça Durumu

Active

Automotive

No

Power Dissipation

390W

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

65

Pin Sayısı

3

Ppap

No

Typical Gate Charge10v Nc

83

Category

Power MOSFET

Eccn Us

EAR99

Supplier Package

TO-220AB

Maximum Gate Source Leakage Current Na

100

Channel Type

N

Typical Fall Time Ns

8

Eu Rohs

Compliant

Typical Turnon Delay Time Ns

30

Tab

Tab

Mounting

Through Hole

Typical Rise Time Ns

17

Package Length

10.66(Max)

Package Width

4.83(Max)

Package Height

9.15(Max)

Maximum Operating Temperature C

150

Typical Input Capacitance Vds Pf

5430@25V

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

390000

Maximum Drain Source Voltage V

250

Maximum Idss Ua

5

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

4.5

Pcb Changed

3

Configuration

Single

Channel Mode

Enhancement

Maximum Continuous Drain Current A

80

Typical Gate Charge Vgs Nc

83@10V

Maximum Drain Source Resistance Mohm

16@10V