IXFP7N80PM

Specifications

Typical Gate Charge10v Nc

32

Ppap

No

Vgs Gatesource Voltage

- 30 V, + 30 V

Vgs Th Gatesource Threshold Voltage

5 V

Pin Sayısı

3

Typical Turnoff Delay Time Ns

55

Qg Gate Charge

32 nC

Automotive

No

Transistor Polarity

N-Channel

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Typical Rise Time Ns

32

Package Length

10.36(Max)

Mounting

Through Hole

Tab

Tab

Typical Turnon Delay Time Ns

28

Typical Fall Time Ns

24

Eu Rohs

Compliant with Exemption

Vds Drainsource Breakdown Voltage

800 V

Rds On Drainsource Resistance

1.5 Ohms

Channel Type

N

Number Of Channels

1 Channel

Supplier Package

TO-220FP

Category

Power MOSFET

Technology

Si

Maximum Drain Source Voltage V

800

Maximum Power Dissipation Mw

50000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

1890@25V

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

Through Hole

Maximum Operating Temperature C

150

Package Height

16.07(Max)

Package Width

4.9(Max)

Pd Power Dissipation

50 W

Kılıf / Paket

TO-220-3

Id Continuous Drain Current

4 A

Maximum Drain Source Resistance Mohm

1440@10V

Typical Gate Charge Vgs Nc

32@10V

Maximum Continuous Drain Current A

3.5