IXFP5N100PM

Specifications

Supplier Package

TO-220FP

Category

Power MOSFET

Eccn Us

EAR99

Process Technology

HiperFET

Channel Type

N

Maximum Gate Source Leakage Current Na

100

Tab

Tab

Typical Turnon Delay Time Ns

12

Typical Fall Time Ns

37

Eu Rohs

Compliant with Exemption

Typical Rise Time Ns

13

Package Length

10.36(Max)

Mounting

Through Hole

Automotive

No

Parça Durumu

Active

Maximum Gate Source Voltage V

±30

Pin Sayısı

3

Typical Turnoff Delay Time Ns

30

Typical Gate Charge10v Nc

33.4

Ppap

No

Minimum Operating Temperature C

-55

Maximum Gate Threshold Voltage V

6

Configuration

Single

Pcb Changed

3

Maximum Drain Source Resistance Mohm

2800@10V

Typical Gate Charge Vgs Nc

33.4@10V

Maximum Continuous Drain Current A

2.3

Channel Mode

Enhancement

Maximum Operating Temperature C

150

Package Height

16.07(Max)

Package Width

4.9(Max)

Maximum Drain Source Voltage V

1000

Maximum Idss Ua

10

Maximum Power Dissipation Mw

42000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

1830@25V