IXFP56N30X3

Specifications

Vgs Th Gatesource Threshold Voltage

2.5 V

Ppap

No

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Gate Charge10v Nc

56

Maximum Gate Source Voltage V

±20

Parça Durumu

Active

Transistor Polarity

N-Channel

Automotive

No

Qg Gate Charge

56 nC

Hts

8541.29.00.95

Typical Turnoff Delay Time Ns

64

Pin Sayısı

3

Vds Drainsource Breakdown Voltage

300 V

Eu Rohs

Compliant

Typical Fall Time Ns

10

Typical Turnon Delay Time Ns

21

Tab

Tab

Mounting

Through Hole

Package Length

10.66(Max)

Typical Rise Time Ns

26

Technology

Si

Category

Power MOSFET

Eccn Us

EAR99

Number Of Channels

1 Channel

Supplier Package

TO-220AB

Channel Type

N

Rds On Drainsource Resistance

27 mOhms

Montaj Stili

Through Hole

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Input Capacitance Vds Pf

3750@25V

Maximum Power Dissipation Mw

320000

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

300

Id Continuous Drain Current

56 A

Kılıf / Paket

TO-220-3

Pd Power Dissipation

320 W

Seri

HiPerFET

Package Width

4.83(Max)

Package Height

9.15(Max)

Maximum Operating Temperature C

150