IXFP4N85XM

Specifications

Package Width

4.9(Max)

Package Height

16.07(Max)

Maximum Operating Temperature C

150

Operating Junction Temperature C

-55 to 150

Typical Input Capacitance Vds Pf

247@25V

Maximum Power Dissipation Mw

35000

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

850

Maximum Gate Threshold Voltage V

5.5

Minimum Operating Temperature C

-55

Channel Mode

Enhancement

Maximum Continuous Drain Current A

3.5

Maximum Drain Source Resistance Mohm

2500@10V

Typical Gate Charge Vgs Nc

7@10V

Pcb Changed

3

Configuration

Single

Typical Turnoff Delay Time Ns

28

Pin Sayısı

3

Maximum Gate Source Voltage V

±30

Parça Durumu

Active

Automotive

No

Ppap

No

Typical Gate Charge10v Nc

7

Maximum Positive Gate Source Voltage V

30

Maximum Diode Forward Voltage V

1.4

Channel Type

N

Category

Power MOSFET

Supplier Package

OVERMOLDED TO-220

Mounting

Through Hole

Typical Rise Time Ns

27

Package Length

10.36(Max)

Typical Fall Time Ns

20

Eu Rohs

Compliant

Typical Turnon Delay Time Ns

13

Tab

Tab