IXFP4N100P

Specifications

Maximum Drain Source Resistance Mohm

3300@10V

Typical Gate Charge Vgs Nc

26@10V

Maximum Continuous Drain Current A

4

Minimum Operating Temperature

- 55 C

Channel Mode

Enhancement

Configuration

Single

Pcb Changed

3

Minimum Operating Temperature C

-55

Maximum Drain Source Voltage V

1000

Maximum Power Dissipation Mw

150000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

1456@25V

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

Through Hole

Maximum Operating Temperature C

150

Package Height

9.15(Max)

Package Width

4.83(Max)

Pd Power Dissipation

150 W

Kılıf / Paket

TO-220-3

Id Continuous Drain Current

4 A

Package Length

10.66(Max)

Typical Rise Time Ns

36

Mounting

Through Hole

Tab

Tab

Typical Turnon Delay Time Ns

24

Typical Fall Time Ns

50

Eu Rohs

Compliant

Vds Drainsource Breakdown Voltage

1 kV

Rds On Drainsource Resistance

3.3 Ohms

Process Technology

HiperFET

Channel Type

N

Supplier Package

TO-220AB

Number Of Channels

1 Channel

Category

Power MOSFET

Technology

Si

Typical Gate Charge10v Nc

26

Vgs Gatesource Voltage

- 20 V, + 20 V

Ppap

No

Vgs Th Gatesource Threshold Voltage

6 V

Pin Sayısı

3