IXFP3N120

Specifications

Category

Power MOSFET

Eccn Us

EAR99

Supplier Package

TO-220AB

Process Technology

HiperFET

Channel Type

N

Eu Rohs

Compliant with Exemption

Typical Fall Time Ns

18

Tab

Tab

Typical Turnon Delay Time Ns

17

Mounting

Through Hole

Package Length

10.66(Max)

Typical Rise Time Ns

15

Maximum Gate Source Voltage V

±20

Automotive

No

Parça Durumu

Active

Pin Sayısı

3

Typical Turnoff Delay Time Ns

32

Hts

8541.10.00.80

Ppap

No

Typical Gate Charge10v Nc

39

Minimum Operating Temperature C

-55

Configuration

Single

Pcb Changed

3

Maximum Continuous Drain Current A

3

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

4500@10V

Typical Gate Charge Vgs Nc

39@10V

Package Width

4.83(Max)

Maximum Operating Temperature C

150

Package Height

9.15(Max)

Maximum Power Dissipation Mw

200000

Number Of Elements Per Chip

1

Typical Input Capacitance Vds Pf

1050@25V

Maximum Drain Source Voltage V

1200